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BUX98 BUX98A
HIGH POWER NPN SILICON TRANSISTORS
s s s s s
SGS-THOMSON PREFERRED SALESTYPES NPN TRANSISTOR HIGH VOLTAGE CAPABILITY HIGH CURRENT CAPABILITY FAST SWITCHING SPEED
APPLICATIONS HIGH FREQUENCY AND EFFICENCY CONVERTERS s LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT
s
1 2
TO-3 (version R)
DESCRIPTION The BUX98 and BUX98A are silicon multiepitaxial mesa NPN transistor in jedec TO-3 metal case, intended and industrial applications from single and three-phase mains operation.
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol V CER V CES V CEO V EBO IC I CM I CP IB I BM P tot T stg Tj July 1997 Parameter BUX98 Collector-Emitter Voltage (RBE = 10 ) Collector-Base Voltage (V BE = 0) Collector-Emitter Voltage (IB = 0) Emitter-Base Voltage (IC = 0) Collector Current Collector Peak Current (tp < 5 ms) Collector Peak Current non Rep. (tp < 20 s) Base Current Base Peak Current (t p < 5 ms) Total Power Dissipation at T case < 25 o C Storage Temperature Max Operating Junction Temperature 850 850 400 7 30 60 80 8 30 250 -65 to 200 200 Value BUX98A 1000 1000 450 V V V V A A A A A W
o o
Unit
C C 1/4
BUX98 / BUX98A
THERMAL DATA
R thj-case Thermal Resistance Junction-case Max 0.7
o
C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol I CER I CES I CEO I EBO Parameter Collector Cut-off Current (R BE = 10 ) Collector Cut-off Current (V BE = 0 ) Collector Cut-off Current (I B = 0) Emitter Cut-off Current (I C = 0) Test Conditions V CE = V CES V CE = V CES V CE = V CES V CE = V CES V CE = V CEO V EB = 5 V I C = 200 mA for BUX98 for BUX98A L = 2mH for BUX98 for BUX98A for BUX98 I C = 20 A for BUX98A I C = 16 A I C = 24 A for BUX98 I C = 20 A for BUX98A I C = 16 A for BUX98 V CC = 150 V I B1 = - I B2 = 4 A for BUX98A V CC = 150 V I B1 = - I B2 = 3.2 A I C = 16 A I C = 20 A IC = 1 A 850 1000 IB = 4 A I B = 3.2 A IB = 5 A IB = 4 A I B = 3.2 A 1.5 1.5 5 1.6 1.6 1 3 0.8 1 3 0.8 V V V V V V V s s s s s s T CASE = 125 C T CASE = 125 C
o o
Min.
Typ.
Max. 1 8 400 4 2 2
Unit A mA A mA mA mA
V CEO(sus) Collector-Emitter Sustaining Voltage V CER(sus) Collector-Emitter Sustaining Voltage V CE(sat) Collector-Emitter Saturation Voltage
400 450
V V
V BE(sat)
Base-Emitter Saturation Voltage
t on ts tf t on ts tf
Turn-on Time Storage Time Fall Time Turn-on Time Storage Time Fall Time
Pulsed: Pulse duration = 300 s, duty cycle = 1.5 %
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BUX98 / BUX98A
TO-3 (version R) MECHANICAL DATA
mm MIN. A B C D E G N P R U V 30.10 3.88 10.9 16.9 26.2 4.09 39.50 1.185 0.152 0.96 TYP. 11.7 1.10 1.70 8.7 20.0 0.429 0.665 1.031 0.161 1.555 0.037 MAX. MIN. inch TYP. 0.460 0.043 0.066 0.342 0.787 MAX.
DIM.
P G
A
D C
U
V
O
N
R
B
P003N
3/4
E
BUX98 / BUX98A
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. (c) 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A ...
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